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Solar Polycrystalline Silicon Wafer

Solar Polycrystalline Silicon Wafer

Price : On Request

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Product Details

  • Growth Method : Directional solidification
  • Conductivity Type : P type
  • Dopant : Boron
  • Resistivity : 1~3Ω.cm
  • Oxygen Content : 1×10 18 atom/cm 3
  • Carbon Content : 4×10 17 atom/cm 3
  • Side : 156.0mm ± 0.5mm
  • Corner diagonal : 1.5mm ± 0.5mm
  • Corner Angle : 45°±10°
  • Thickness : 180±20μm; 200±20μm
  • Surface : No stain or splash on surface
  • TTV : ≤40μm
  • Bow : ≤70μm
  • Surface : No efect
  • Saw Mark : ≤15μm

Specification